The difference between nitrogen and argon as protective gas
Summary: Argon is heavier than nitrogen because argon has a larger molecular weight, and argon is more inert than nitrogen, so argon-filled welding has a wider application range than nitrogen-filled shielded welding. Nitrogen: Elemental nitro...Date:Feb 27 2023
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Predictions of gas supply dynamics changes due to the Russo-Ukrainian War
Since the outbreak of the Russo-Ukrainian War, the world has been closely monitoring the military situation and geopolitical dynamics in Ukraine. This conflict has had profound implications not only for Ukraine and Russia but also for the global energy ma...
Precautions for the use of ethylene oxide
Ethylene oxide (EO), also known as oxirane, is an organic compound with the chemical formula C2H4O. It is a colorless, toxic, and highly flammable gas that can exist as a liquid under normal temperature and pressure. Ethylene oxide exhibits high chemical ...
Application of Ultrapure Ammonia in Electronic Semiconductors
Ultra-pure ammonia gas is a highly pure gas, typically used in the electronic technology applications of the semiconductor manufacturing industry. Ultra-pure ammonia gas has a purity of over 99.999% and is prepared through specialized manufacturing proces...
The role of high-purity argon in plasma etch
Plasma Etch is a widely used technology in semiconductor processing. Its basic principle is to use plasma generated by gas discharge to etch semiconductor materials' surface. In the etching process, inert gases are used as dilution gases to regulate p...
Introduction of orthoethyl silicate (TEOS)
TEOS (tetraethyl orthosilicate) is an organosilicon compound with the chemical formula Si(OC2H5)4. It is widely used in the chemical industry as a silicon source for the production of silicon dioxide (SiO2) and other silicon compounds. TEOS is also used f...